M06800 - SEMI M68 - Test Method for Determining Wafer Near-Edge Geometry from a Measured Height Data Array Using a Curvature Metric, ZDD StdPbc-0822 5 ICP-MS

5  ICP-MS

The source is normally a polarized laser beam in combination with a high-contrast prism polarizer

org in November 2010

originally published August 2011

SEMI C27-0118 (technical revision)

M06800 - SEMI M68 - Test Method for Determining Wafer Near-Edge Geometry from a Measured Height Data Array Using a Curvature Metric, ZDD StdPbc-0822 5 ICP-MSWafer near edge geometry can significantly affect the yield of semiconductor device processing. Knowledge of near edge geometrical properties can help the producer and consumer determine if the dimensional characteristics of a specimen wafer satisfy given geometrical requirements. The metric, ZDD, quantifies the near edge curvature of wafers used in semiconductor device processing. Consideration should be given to the use of this or other proposed