HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded SEMI M31-0698 (first published)

SEMI M31-0698 (first published)

このスタンダードは以下を期待される：

1-1102 (Reapproved 0309) - オブジェクト基盤装置モデルのためのSECS-II プロトコル用暫定仕様

including near-edge substrate contamination levels

Slices can be any crystallographic orientation and should be polished or lapped and etched on both surfaces

HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded SEMI M31-0698 (first published)The sapphire single crystal ingot is used as a substrate material for HB LED applications. To permit common processing equipment to be used in multiple device fabrication lines, it is essential for the sapphire single crystal ingot specifications to be standardized. This Specification provides the characteristics of sapphire single crystal ingot, consisting of the physical specification, orientation, shape, and defect standard. This Specification is