Si Wafer (111), 4 " dia x 0.4 mm, 1SP, N Type, undoped, FZ, R>5000 ohm-cm Cases Accessories working temperature: 80oC
$148.75
Description
working temperature: 80oC
Mobility: (4890-5360) cm^2/V
Polish: One side optical polished
Polish: Double sides EPI polished by CMP tecnology with less sub-surface lattice damage
Orientation: Z-cut +/- 0
Si Wafer (111), 4 " dia x 0.4 mm, 1SP, N Type, undoped, FZ, R>5000 ohm-cm Cases Accessories working temperature: 80oCSingle crystal Si Conductivity: N type ( undoped) Resistivity: >5000 ohm CM Size: 4" diameter x 0. 4 mm Orientation: (111) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
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- Standard Shipping : 3-10 business days
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