Si (110) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUe101005S1R1000 High-throughput Characterization & XRF ~~3 x10-4 @77K

~~3 x10-4 @77K

Discharging:  - 10 - 60 oC (14 - 140 o F)

Material: 45# steel with Cr plated (all shinning parts) for anti-crossing

Please contact us to order option Inline carbon filter to maintain a safe laboratory environment

Sellmeier Equation ( l in mm )  ho2 (l) = 4

Si (110) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUe101005S1R1000 High-throughput Characterization & XRF ~~3 x10-4 @77KSpecifications: Single crystal: Si Conductive type: N typre, undoped Resistivity: > 1000 ohm cm Size: 10 x 10 x 0. 5 mm Orientation: (110) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater