Ge single crystal substrate (100)N-type ,undoped ,10x10x0.5mm,2sp, R>50 ohm.cm Thermal Evaporation 12 @ 100 oC

12 @ 100 oC

Remove hand jewelry before welding

Porosity rate: 7

12 @ 100 oC

Polyfluortetraethylene (PTFE) made flange interior (only the flange interior will expose to the reaction chamber)

Ge single crystal substrate (100)N-type ,undoped ,10x10x0.5mm,2sp, R>50 ohm.cm Thermal Evaporation 12 @ 100 oCSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z