Ge (111), Flat-(1-10), N-type, Sb-doped, 10x10x0.5mm, 1sp, R:0.005-0.01 ohm.cm Ge and 35mm in height

and 35mm in height

Such a device is 1000 grade cleanroom compatible and it will satisfy the most demanding battery assembling environment

it is suggested that to use the jar for the single kind sample

140 mm length

We suggest cutting sample along with the included dressing stone (Glue sample and the dressing stone side by side and cut them together

Ge (111), Flat-(1-10), N-type, Sb-doped, 10x10x0.5mm, 1sp, R:0.005-0.01 ohm.cm Ge and 35mm in heightSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: One side epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater