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Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm Bi4Ge3O12(BGO12) (AS Shown in pic-1)
Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm Bi4Ge3O12(BGO12) (AS Shown in pic-1)
$40.19
Description
(AS Shown in pic-1)
No Insulating gasket
Max Load: 600 metric ton (at room temperature)
Update: Since Apr
Surface Quality
Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm Bi4Ge3O12(BGO12) (AS Shown in pic-1)Ge Wafer Specification Growing Method: CZ Wafer Size: 10x5 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 01 0. 05 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
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- Standard Shipping : 3-10 business days
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 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm Bi4Ge3O12(BGO12) (AS Shown in pic-1)){kind=link}