50 ohm-cm Al2O3 the PTFE flange may meltGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal"> 50 ohm-cm Al2O3 the PTFE flange may melt"> 50 ohm-cm Al2O3 the PTFE flange may meltGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal"> 50 ohm-cm Al2O3 the PTFE flange may melt"> 50 ohm-cm Al2O3 the PTFE flange may meltGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal"> Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm Al2O3 the PTFE flange may melt – wallgym.ca

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Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm Al2O3 the PTFE flange may melt

$401.93

Quantity
50 ohm-cm Al2O3 the PTFE flange may melt">
Description

the PTFE flange may melt off if the furnace temperature is higher than 500ºC

18650 case's grooving  and sealing machine is available upon request

Please click the picture on the left to see the details and order related products below (You will need to grind the crucible's top edge diameter to <54mm to fit into this quartz tube)

Water Cooling Pump is required (May order at the related product below)

Melting point:                                        710 oC

Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm Al2O3 the PTFE flange may meltGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal

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