Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp Pouch Cell Cd-terminated

Cd-terminated

Flow Rate:           CFM: 780

Click the link here to see MSK-140

Mobility:4120-5860 cm^2/V

Cap Diameter: 48

Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp Pouch Cell Cd-terminatedSpecifications: Cu coated SiO2 Si Wafer ( 10x10 mm size) Thickness of polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 10x10x0. 5 mm Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm thermal oxide: 300 nm Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order