BUSHING 18 X 28 X 18 Item Number:71551144
US$ 172.01
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Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Sn-doped 10x10x0.5mm, 1SP S For more information
Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Sn-doped 10x10x0.5mm, 1SP S For more information
$917.12
Description
For more information
Polishing: one side polished
it does not work as a stand-alone product
TTV: < 10um
Specifications: Research Grade
Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Sn-doped 10x10x0.5mm, 1SP S For more informationSubstrate Specifications: Chmistry: Ga2O3 Structure: Monoclinic Lattice Constant: a=12. 23A, b=3. 04A, c=5. 80A, =103. 7 Orientation: <100> + 1 ( Please pay attention a, b, c axis defination above ) Type Dopant: N type ,Sn doped Size: 10x10 x 0. 5 mm Polish: one side polished Resistivity: <0. 01 ohm. cm Surface roughness: < 15A Useful Area: >80%
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