Ge N-type SB-doped (111) 5x5x0.5mm 1sp, R: 0.005-0.01 ohm.cm Ga Demonstration of Vanadium Redox Flow

Demonstration of  Vanadium Redox Flow Cell Testing System

In course of CVD fabrication of graphene hydrogen and methane gases are introduced into a furnace that heats to 1000° Celsius

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EPD:                           < 5x104/cm-2

Nc>2x10^18 /cc

Ge N-type SB-doped (111) 5x5x0.5mm 1sp, R: 0.005-0.01 ohm.cm Ga Demonstration of Vanadium Redox FlowSpecifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: One side epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater