Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm Miscellaneous Hafnium( Hf ) substrate (

Hafnium( Hf ) substrate ( Polycrystalline)

Two 1/4 BSPP Male-to-Male Couplers

Diameter:    50

The fully diamond sintered blade is suitable for low speed cutting ( under 3000 RPM) of oxide single crystals or any brittle crystal

Y:   20 mm +/- 0

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm Miscellaneous Hafnium( Hf ) substrate (Ge Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : Two sides optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A