GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulating CeO2 (Epi-film) 05'' thickness and 1
$629.62
Description
05'' thickness and 1
A complete calibration system
Conductor type: P-type
In order to make thin coating
20mm maximum
GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulating CeO2 (Epi-film) 05'' thickness and 1GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow <5
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