50 ohm.cm Battery Consumables Flates: 2 SEMI-STD on AxisGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754"> 50 ohm.cm Battery Consumables Flates: 2 SEMI-STD on Axis"> 50 ohm.cm Battery Consumables Flates: 2 SEMI-STD on AxisGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754"> 50 ohm.cm Battery Consumables Flates: 2 SEMI-STD on Axis"> 50 ohm.cm Battery Consumables Flates: 2 SEMI-STD on AxisGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754"> Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,2SP, R:>50 ohm.cm Battery Consumables Flates: 2 SEMI-STD on Axis – wallgym.ca

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Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,2SP, R:>50 ohm.cm Battery Consumables Flates: 2 SEMI-STD on Axis

$148.35

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50 ohm.cm Battery Consumables Flates: 2 SEMI-STD on Axis">
Description

Flates:         2 SEMI-STD on Axis 0 degree off

Belt driven platen with stable and quiet operation

5 ms @ 540 nm

and Li half-cell testing

This furnace module (liner&heating elements inside) is designed for easy replacement of the KSL-1200X-J-UL liner and heating elements

Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,2SP, R:>50 ohm.cm Battery Consumables Flates: 2 SEMI-STD on AxisGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754

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