GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp, Tube Furnaces

GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp, Tube FurnacesGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 5x5x0. 5mm Polishing: One side polished Doping: undoped Conductor type: SI, Semi Insulating Resistivity: (0. 1 3. 24 )x 10^8 Ohm. cm Mobility: 4500 5630 cm^2 V. S EPD: <5000 cm^ 2

5Mpa (the cap will open to release high pressure inside if over 2

Warning: Please choose NEVER for Screen and Sleep in the Power& Sleep setting of your computer

Structure:                         Cubic

Composition:     Al2O3  ceramic

Output 0-260V   /     0-520V   (3/4 Phase+ G) 40-70 Hz The Max Current Per Phase: 125A/62

Thermal Couple:             K Type

65535 cycles

Upgrade the battery tester with a remote wireless control which provides up to 50 meters operating range in an open area

CHIP TRAY MATERIAL:   Natural ABS With ESD Coating

Application Notes Replace tube for MTI tube furnaces Operating from 1600oC to 1750oC

Please use our 3'' Dia

standard microscope slides coated with 100nm of gold with a 5nm Titanium adhesion layer between the glass slide surface and the gold coating