GaAs ,Growing Method: VGF (111)B , SI, undoped, 100mm dia x 0.625 mm, 1 sp Ceramic Coatings and Adhesives

GaAs ,Growing Method: VGF (111)B , SI, undoped, 100mm dia x 0.625 mm, 1 sp Ceramic Coatings and AdhesivesGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 100mm dia x 0. 625mm Polishing: One side polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 52 2. 19)E8 ohm. cm Carrier Concentration: N A Mobility: (5690 5970) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers

18mm Coating Positive side of casing is coated with aluminum Al coating thickness < 0

Unipol-800 is quiet and easy to clean up

Radiation length (cm)

Centrifugal Acceleration Revolution: 30-350 rpm

Size: 10X10 x 0

Other ITO Film

Speed Control for the blower is available at extra cost

Two 18S PTFE Connecting Tubes (1

Conductive type:        Si   n-type

Chamber:  300mmD x 200mmW x 120mmH (12"D x 8"W x 6"H)

Conductor type:                  N-type

Agate Milling Ball