InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished Ga EPD: <5000cm^-2

EPD:                                <5000cm^-2

Warning:  You need to mill the empty jar  by  milling media before mixing material to avid surface contamination

You may consider ordering a quick connecting flange at extra cost

Surface roughness:         < 8 A ( by AFM)

Conduction Type: N-type

InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished Ga EPD: <5000cm^-210x10x0. 45 mm InSb wafer (P type, Ge doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Orientation Flat Doping Ge ndoped Conductivity type P type Carrier Concentration (0. 05 0. 50)E17@77K