50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Front Surface finish (Ga-face): <1nmGe Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other"> 50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Front Surface finish (Ga-face): <1nm"> 50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Front Surface finish (Ga-face): <1nmGe Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other"> 50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Front Surface finish (Ga-face): <1nm"> 50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Front Surface finish (Ga-face): <1nmGe Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other"> Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Front Surface finish (Ga-face): <1nm – wallgym.ca

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Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Front Surface finish (Ga-face): <1nm

$212.72

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50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Front Surface finish (Ga-face): <1nm">
Description

Front Surface finish (Ga-face):    <1nm RMS

Specification Material Aluminum 99

Wafer Size: 5x5x0

SiC Ceramic Substrates

SiC foam is employed as a heating element which is a microwave susceptor

Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Front Surface finish (Ga-face): <1nmGe Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other

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