KTaO3 (111) 10x10x0.5 mm 1sp KTaO3 58@ 300K at C axis

58@ 300K at C axis

Carrier Concentration                                     (1-30)x10^17/ cm3

it is suggested that to use the jar for the single kind sample

Dip Coating

the continuous operation period should be limited to <24 hours)

KTaO3 (111) 10x10x0.5 mm 1sp KTaO3 58@ 300K at C axisSingle crystal KTaO3 Orientation: (111) Size: 10mm x 10mm x 0. 5mm Polish: One side polish Typical Properties Molecular weight: 268. 04 Crystal Structure: Cubic, Perovskite, a = 3. 989Angstroms Melting point: Does not melt congruently. Density: 7. 015 g cc Thermal conductivity: 10 20 w m. k at 300k Refractive index: 2. 14 Sellenmeyer equation: ho2 1 =3. 591l2 (l2 ? 0. 193) 2 ) (l in mm, from 0. 4 ? 1. 06 mm ) Crystal growth method: Top seed flux growth