Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon Ingestion-build-117251 4 Terms and definitions

4 Terms and definitions

due to exposure to gamma radiation

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IRRADIATION for determination of the NOISE POWER SPECTRUM and LAG

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon Ingestion-build-117251 4 Terms and definitions1 Scope This International Standard specifies a secondary ion mass spectrometric method using magnetic sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single crystal, poly crystal, or amorphous silicon specimens with boron atomic concentrations between 1 1016 atoms cm3 and 1 1020 atoms cm3, and to crater