Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cm Ga

Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cm GaSilicon Single crystal wafer (111) orientation 6" Diameter x 0. 65 0. 7 mm P type, boron doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) One side polished Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

higher safety

Power Voltage: 110 - 120VAC

except for defective as received

Diamond wire cutting is a state of the art technology to slice single crystal wafer or substrate

Operating Temperature 0 to 50°C

08mm thickness) - EQ-bcnf-80um

Compact design: small footprint

Minority-Carrier Lifetime:  100 us

Operation Instructions Warranty One year limited with lifetime support (Attention: Improper use will cause all claims for liability and warranties to be forfeited

Hydraulic Pressure in Chamber 300 Mpa ( 43500 PSI)  Hydraulic Machine optional

GSL-1100X-NT is a compact tube furnace (1~2" diameter) designed for firing small samples up to 1100oC

Porosity: 80%