GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp Fuse

GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp FuseGaP single crystal wafer, Size: 2" diameter(0. 15mm) x 0. 45mm(0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)30' Edge Orientation: (110)1 Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100>

2500 ~ 3500

Capable for KSL-1650X-GS65 furnace

01 -3000PPM ) with KF40 Connector Humidity & Oxygen Purifying system < 1 ppm)

85 for the CMC with viscosity of 3500-5500 cps

Surface Quality: 80/50

01 Non REO Impurity <0

FKM is also suitable for high vacuum applications

32-Position Adapter

Built-in PTFE slurry slot with 180mm coating width to make coating material evenly distributed ahead of the blade

LiCoO2 (LCO) electrode sheet

Model  RT32-00  Voltage  500 V~120KA

you must check the substrate by XRD before growing the film