23400 cm2 V. S EPD <10000 cm 2 Resistivity: 1. 3x10^ 2 ohm. cm Standard thickness 450 25 mm Standard diameter 2" 0. 4mm Polish one side Related Product Other InAs InSb InP GaAs GaSb Wafer Box Film Coater RTP Furnaces"> 23400 cm2 V. S EPD <10000 cm 2 Resistivity: 1. 3x10^ 2 ohm. cm Standard thickness 450 25 mm Standard diameter 2" 0. 4mm Polish one side Related Product Other InAs InSb InP GaAs GaSb Wafer Box Film Coater RTP Furnaces"> 23400 cm2 V. S EPD <10000 cm 2 Resistivity: 1. 3x10^ 2 ohm. cm Standard thickness 450 25 mm Standard diameter 2" 0. 4mm Polish one side Related Product Other InAs InSb InP GaAs GaSb Wafer Box Film Coater RTP Furnaces"> InAs (111)A, N type, undoped, 2" in dia x 0.45mm, 1sp ITO Film on Corning 7980 Atomic Number: 24 – wallgym.ca

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InAs (111)A, N type, undoped, 2" in dia x 0.45mm, 1sp ITO Film on Corning 7980 Atomic Number: 24

$401.93

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Description

Atomic Number:     24

Carrier Concentration                                     6

Hardness:                         ~7mohns

OD:    224

Input Power AC 220V 50/60Hz

InAs (111)A, N type, undoped, 2" in dia x 0.45mm, 1sp ITO Film on Corning 7980 Atomic Number: 24Growth method LEC Orientation (111)A 0. 5 Deg Orientation Flat SEMI Doping Undoped Conductivity type N type Carrier Concentration <2E16 cm 3 Mobility >23400 cm2 V. S EPD <10000 cm 2 Resistivity: 1. 3x10^ 2 ohm. cm Standard thickness 450 25 mm Standard diameter 2" 0. 4mm Polish one side Related Product Other InAs InSb InP GaAs GaSb Wafer Box Film Coater RTP Furnaces

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