Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick, Thin Film Measurement Conductor type: N-type

Conductor type:            N-type

Corning Willow Glass Substrates

It is suitable for using on the Furnaces (1800C) with SCR & SiC/MoSi2 Heating Elements

Growth Technique:  MOCVD

525 (+/- 0

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick, Thin Film Measurement Conductor type: N-typeSilicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation. U. S. Dept. of Commerce requires End User Certificate for