VGF-Ge Wafer(100) 100 mm dia x 0.5 mm, 1SP, P type (Ga doped) R:0.128-0.303 Ohm.cm Se Nc=~5E15/cc

Nc=~5E15/cc

and other special size cases with optional die sets

The equipment can be used with 110V with a 1000W Transformer

Surface roughness: < 85 Angstrom RMS

It can hold up to 3 " wafer or some of brittle crystal components

VGF-Ge Wafer(100) 100 mm dia x 0.5 mm, 1SP, P type (Ga doped) R:0.128-0.303 Ohm.cm Se Nc=~5E15/ccGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 4 Deg. Wafer Size: 100 mm dia x 500 microns Surface Polishing: One side polished Doping: Ga Doped Conductor type: P type Resistivity: 0. 128 0. 327 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (0. 98 10. 0) x10^16 c. c Mobility: 897 2070 cm^2 Vs EPD: <500 cm^2 Ra(Average