GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2" dia x 0.4 mm, 2sp Orientation 010
$183.43
Description
GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2" dia x 0.4 mm, 2sp Orientation 010GaAs single crystal wafer Growing Method: VGF Orientation: (111)B Size: 2" dia x 0. 4 mm Polishing: two sides polished Doping: Zn doped Conductor type: S C P Resistivity: (7. 49 8. 12)E 2 ohm. cm Carrier Concentration: (3. 70 4. 01)E17cm^ 3 Mobility: (208 209) cm^2 V. S Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Please browse our FH-60 for a large furnace fume hood solution
7Mpa is recommended)
Major Flat: A-axis[11-20]+/-0
MTI supplies high quality hot pressed Alumina cutting blades with 6" diameter x 0
01g (Tabs with Bag) Max
Construction assures accuracy - All flow meter bodies are injection molded of tough
Power Consumption 600 W 20W 20W Working Voltage 110 - 240VAC
05o to M-plane leftwards from the Primary
Surface finish (RMS or Ra) : One side polished < 30A
crystal purity: >99
0 mA to 12 A
02 mA - 10mA
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